ACR3200VR33 bypass thyristor provisional information ds 6189 - 2 august 2016 (ln 33711 ) 1 / 8 www.dynexsemi.com features ? double side cooling ? high surge capability ? very low cosmic ray fit rating ? high dv/dt rating applications ? multi - level vsc by - pass thyristor for hvdc voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions acr3 200 vr33 10 00 / 33 00 t vj = - 40c to 125c, i drm = i rrm = 4 00ma, v drm , v rrm t p = 10ms, ordering information for example: acr3 200 vr33 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 10 00v v rrm 33 00v i t(av) 3 200 a i tsm 43000 a dv/ dt 10k v/s di/dt 400a/s outline type code: v (see package details for further information) fig. 1 package outline
semiconductor ACR3200VR33 2 / 8 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 3 200 a i t(rms) rms value - 5026 a i t continuous (direct) on - state current - 4900 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 43 ka i 2 t i 2 t for fusing v r = 0 9.24 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00746 c/w single side cooled anode dc - 0.0130 c/w cathode dc - 0.0178 c/w r th(c - h) thermal resistance C case to heatsink clamping force 54kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature blocking v drm / v rrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 48.0 59.0 kn
semiconductor ACR3200VR33 3 / 8 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 4 00 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 60 c, gate open circuit - 10000 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) gate source 30v, 10 ? , non - repetitive - 400 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 3 00a to 24 00a at t case = 125c - 0.8 383 v threshold voltage C high level 24 00 a to 9 000a at t case = 125c - 1.0419 v r t on - state slope resistance C low level 3 00a to 24 00a at t case = 125c - 0. 2374 m ? on - state slope resistance C high level 2400a to 9 000a at t case = 125c - 0.1 490 m ? t gd delay time v d = 67% v drm , i g = 3a, 3 3 s t r = 0.5s, t j = 25c , t p = 40s dc fits dc cosmic ray fit rating t j = 25c, v r = 50% v r rm ,sea level 24 per 10 9 t j = 25c, v r = 67% v r rm ,sea level 743 hours vpu pick - up voltage i g = 3a, t r = 0.5s, t j = 25c, t p = 40s 2 v i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor ACR3200VR33 4 / 8 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at v drm, t case = 125c tbd v i gt gate trigger current v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current v drm = 5v, t case = 25c tbd ma curves fig.2 maximum & minimum on - state characteristics fig.3 cosmic ray dc fit rating v tm equation where a = - 0.303672 b = 0. 216168 v tm = a + b . ln (i t ) + c.i t +d. ? i t c = 0.000164 d = - 0.007999 these values are valid for t j = 125c for i t 3 00a to 9 000 conditions: tj = 25c , sea level 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.00 0.50 1.00 1.50 2.00 2.50 instantaneous on - state current, it - (a) instantaneous on - state voltage , v t - (v) 125 c 75 c 25 c 0 100 200 300 400 500 600 700 800 0% 20% 40% 60% 80% 100% fits (/10 9 hrs) dc voltage (%vrrm)
semiconductor ACR3200VR33 5 / 8 www.dynexsemi.com fig. 4 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 2 4 6 8 10 12 14 16 18 20 0.001 0.1 10 thermal impedance , z th(j - c) - ( c/kw) time ( s ) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.9206 1.8299 3.4022 1.3044 t i (s) 0.0076807 0.0579454 0.4078613 1.2085 anode side cooled r i (c/kw) 0.9032 1.6719 3.0101 7.4269 t i (s) 0.0075871 0.0536531 0.3144537 5.624 cathode side cooled r i (c/kw) 0.9478 2.0661 1.6884 13.0847 t i (s) 0.0078442 0.0645541 0.3894389 4.1447 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.34 0.88 180 1.34 0.88 180 1.33 0.88 120 1.57 1.30 120 1.57 1.30 120 1.57 1.29 90 1.83 1.54 90 1.84 1.54 90 1.83 1.53 60 2.08 1.81 60 2.08 1.81 60 2.07 1.80 30 2.27 2.11 30 2.28 2.11 30 2.26 2.10 15 2.36 2.28 15 2.37 2.28 15 2.35 2.26
semiconductor ACR3200VR33 6 / 8 www.dynexsemi.com fig 5 gate characteristics fig. 6 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor ACR3200VR33 7 / 8 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. device maximum thickness (mm) minimum thickness (mm) acr2900vr45 27. 67 26. 92 ACR3200VR33 27. 48 26. 73 a cr3350v r 45 27.44 26.69 a cr3775v r 33 27.34 26.59 lead length: 420mm lead terminal connector: m4 ring package outline type code: v weight 1100g fig. 7 package outline
semiconductor ACR3200VR33 8 / 8 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. alth ough we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document a nd is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, inj ury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electro cution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric cha rge remaining in the product must be discharged and allowed to cool before safe han dling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme condition s, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect person s and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: th is is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initial development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sh eet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web : http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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